In situ synthesis of flower-like ZnO on GaN using electrodeposition and its application as ethanol gas sensor at room temperature
| Autor: | Shaohui Zhang, Long Zhang, Rui Xi, Chao Wang, Zu-Gang Wang, Ge-Bo Pan, Lu-Jia Wang |
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| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science Composite number chemistry.chemical_element 02 engineering and technology Zinc Conductivity 010402 general chemistry 01 natural sciences Metal Materials Chemistry Electrical and Electronic Engineering Instrumentation Detection limit business.industry Metals and Alloys Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business Selectivity |
| Zdroj: | Sensors and Actuators B: Chemical. 292:270-276 |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/j.snb.2019.04.140 |
| Popis: | The morphology and structure of sensing materials are extremely important to performances of gas sensor. Zinc oxide (ZnO) is a promising gas-sensing material, due to its morphology controllable fabrication. In this work, flower-like ZnO (FZnO) was synthesized on GaN by electrodeposition as sensing materials of ethanol gas sensor. FZnO consisting of ZnO nanosheets with thickness of 55 nm is in situ grown on GaN. When FZnO/GaN heterojunction is used as sensing materials for detection of ethanol, this material possesses a higher response than ZnO or ZnO composite at room temperature. In detail, the FZnO/GaN based gas sensor displays remarkable sensitivity (Ra/Rg = 26.9), when the sensor is exposed to ethanol at the concentration of 50 ppm at room temperature. Importantly, rapid response and recovery time is 12 and 9 s, respectively. Meanwhile, this sensor presents excellent selectivity and stability. In addition, detection limit of the sensor is 100 ppb. Enhancement of the sensing response is mainly attributed to the FZnO and conductivity of the GaN. These results indicate the potential applications of the as-prepared metal oxide semiconductor based GaN in the sensing field. |
| Databáze: | OpenAIRE |
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