Activation conductivity in HgTe/CdHgTe quantum wells at integer Landau level filling factors: Role of the random potential
| Autor: | K. E. Spirin, Sergey S. Krishtopenko, Sergey A. Dvoretsky, A. V. Antonov, A. V. Ikonnikov, Nikolay N. Mikhailov, L. S. Bovkun, V. I. Gavrilenko, V. Ya. Aleshkin |
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| Rok vydání: | 2017 |
| Předmět: |
Physics
Condensed matter physics Exchange interaction 02 engineering and technology Landau quantization Atmospheric temperature range Potassium-40 Conductivity Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials 0103 physical sciences Density of states 010306 general physics 0210 nano-technology Quantum Quantum well |
| Zdroj: | Semiconductors. 51:1562-1570 |
| ISSN: | 1090-6479 1063-7826 |
| Popis: | Shubnikov-de Haas oscillations are studied in 8-nm-wide HgTe/CdHgTe quantum wells with an electron concentration of (1.7–13) × 1011 cm–2 in the temperature range from 1.6 to 40 K. The gaps between Landau levels and the quantum relaxation time are determined from the temperature dependence of the oscillation amplitude at integer filling factors. The experimental gap values are found to be in good agreement with the results of the single-particle calculation of the level energies using the 8-band Kane model. The experimental widths of the density of states are indicative of profound screening of the exchange interaction in HgTe/CdHgTe quantum wells. |
| Databáze: | OpenAIRE |
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