Autor: |
Guenole Jan, Luc Thomas, Ru-Ying Tong, Terry Torng, Jesmin Haq, Tom Zhong, Shen Dongna, Son T. Le, Rao Annapragada, Teng Zhongjian, Renren He, Po-Kang Wang, K. Pi, Santiago Serrano-Guisan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Vinh Lam, Yuan-Jen Lee |
Rok vydání: |
2015 |
Předmět: |
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Zdroj: |
2015 IEEE International Electron Devices Meeting (IEDM). |
Popis: |
Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ∼30nm. Here we report that contrary to this conventional wisdom, chip-level data retention exhibits substantial size dependence for diameters between 55 and 100 nm. We show that the method widely used to measure A is inaccurate for devices larger than ∼30 nm, leading to significant underestimation of the size dependence. We derive an improved model, allowing us to reconcile the size dependence of A measured at device and chip level. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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