Growth and Properties of Core-Shelled SiC-SiO2 Nanowires Using Chemical Vapor Deposition
| Autor: | Bol Wen Yang, Jyh-Ming Ting, Wan-Yu Wu, Kun Hou Liao |
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| Rok vydání: | 2011 |
| Předmět: |
Marketing
Materials science Nanowire Cathodoluminescence Crystal structure Chemical vapor deposition Condensed Matter Physics Amorphous solid Core (optical fiber) Crystallography Chemical engineering Transmission electron microscopy Materials Chemistry Ceramics and Composites Selected area diffraction |
| Zdroj: | International Journal of Applied Ceramic Technology. 9:100-107 |
| ISSN: | 1546-542X |
| DOI: | 10.1111/j.1744-7402.2011.02637.x |
| Popis: | Core-shelled SiC–SiO2 nanowires have been synthesized on mechanically scratched Si substrates using a catalyst-assisted chemical vapor reaction process at 1100°C. The average diameter and length are 30 nm and in the order of 101 μm, respectively. The SiC core exhibits a single crystalline structure, while the core is amorphous. High-resolution transmission electron microscopy images and selected area diffraction patterns show that the (111) planes of the SiC are at an angle of approximately 71° to the nanowires axis. The existence of the SiO2 alters the cathodoluminescence spectra of the SiC nanowires. A growth mechanism is also suggested. |
| Databáze: | OpenAIRE |
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