Liquid Phase Epitaxy of Gallium Nitride
Autor: | Jacek B. Jasinski, Daniel F. Jaramillo-Cabanzo, Mahendra K. Sunkara |
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Rok vydání: | 2019 |
Předmět: | |
Zdroj: | Crystal Growth & Design. 19:6577-6585 |
ISSN: | 1528-7505 1528-7483 |
DOI: | 10.1021/acs.cgd.9b01011 |
Popis: | In this work, liquid phase epitaxy of gallium nitride (GaN) has been achieved using pulsed plasma nitridation of molten Ga films. Typically, continuous exposure of Ga to nitrogen plasma results in ... |
Databáze: | OpenAIRE |
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