Liquid Phase Epitaxy of Gallium Nitride

Autor: Jacek B. Jasinski, Daniel F. Jaramillo-Cabanzo, Mahendra K. Sunkara
Rok vydání: 2019
Předmět:
Zdroj: Crystal Growth & Design. 19:6577-6585
ISSN: 1528-7505
1528-7483
DOI: 10.1021/acs.cgd.9b01011
Popis: In this work, liquid phase epitaxy of gallium nitride (GaN) has been achieved using pulsed plasma nitridation of molten Ga films. Typically, continuous exposure of Ga to nitrogen plasma results in ...
Databáze: OpenAIRE