Band gap and strain engineering of pseudomorphic Ge1−x−ySixSnyalloys on Ge and GaAs for photonic applications
| Autor: | Ramsey Hazbun, James N. Hilfiker, Ryan Hickey, John Hart, James Kolodzey, Stefan Zollner, Stefan Schoeche, Rigo A. Carrasco, Nalin Fernando |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Condensed matter physics business.industry Band gap Process Chemistry and Technology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Strain engineering Ellipsometry 0103 physical sciences X-ray crystallography Materials Chemistry Direct and indirect band gaps Electrical and Electronic Engineering Deformation (engineering) Photonics 0210 nano-technology business Instrumentation Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36:021202 |
| ISSN: | 2166-2754 2166-2746 |
| DOI: | 10.1116/1.5001948 |
| Popis: | The authors report the compositional dependence of the direct and indirect band gaps of pseudomorphic Ge1−x−ySixSny alloys on Ge and GaAs with (001) surface orientation determined from deformation potential theory and spectroscopic ellipsometry measurements. The effects of alloying Ge with Si and Sn and the strain dependence of the band gaps at the Γ, Δ, and L conduction band minima are discussed. Deformation potential theory predicts an indirect to direct crossover in pseudomorphic Ge1−y−xSixSny alloys on Ge or GaAs only for very high Sn concentrations between 15% and 20%. No indirect to direct cross-over in pseudomorphic Ge1−ySny alloys (x = 0) on Ge or GaAs was found for practically approachable Sn compositions (y |
| Databáze: | OpenAIRE |
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