A Fabrication Method for Reduction of Silicide Contamination in Polycrystalline-Silicon Thin-Film Transistors
| Autor: | Shin-Hee Han, Min-Sun Kim, Young-Su Kim, Nam-Kyu Song, Seung-Ki Joo |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Fabrication
Materials science business.industry General Chemical Engineering Transistor engineering.material Contamination law.invention Reduction (complexity) chemistry.chemical_compound Polycrystalline silicon chemistry Thin-film transistor law Silicide Electrochemistry engineering Optoelectronics General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry Crystallization business |
| Zdroj: | Electrochemical and Solid-State Letters. 10:H142 |
| ISSN: | 1099-0062 |
| Popis: | A major cause of degradations in polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) fabricated by Ni metal-induced lateral crystallization (MILC) is known to be due to the presence of Ni silicides in the channel region. In this letter, we proposed a structure for the reduction of Ni silicides in the MILC region. Also, the electrical properties of poly-Si TFTs which were fabricated with the structure were investigated. It was found that the field-effect mobility and the leakage current of p-channel Ni seed MILC TFTs is significantly improved compared to TFTs fabricated by conventional MILC process. |
| Databáze: | OpenAIRE |
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