Preparation and characterization of p-type Sb2Te3 and n-type Bi2Te3 thin films grown by coevaporation
| Autor: | D. M. Rowe, Helin Zou, Gao Min |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Antimony telluride
Materials science Analytical chemistry Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Thermoelectric materials Surfaces Coatings and Films Crystallinity chemistry.chemical_compound chemistry Seebeck coefficient Thermoelectric effect Bismuth telluride Thin film |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:899-903 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1354600 |
| Popis: | p-type antimony telluride thin films and n-type bismuth telluride thin films have been deposited by coevaporation on glass substrates. The conditions for deposition have been investigated as a function of substrate temperature (Ts), flux ratio (Fr=F(Te)/F(Sb, Bi)) and optimized to achieve a high thermoelectric power factor. The quality of deposited films, e.g. structure, composition and morphology, has been examined by x-ray diffraction, energy dispersive x-ray analysis, flame atomic absorption spectroscopy, and with an atomic force microscope. The thermoelectric properties of the thin films have been evaluated by room temperature measurement of the Seebeck coefficient, Hall coefficient, and electrical resistivity. Both the crystallinity and the transport properties are strongly affected by nonstoichiometry with the highly stoichiometric samples exhibiting a high crystallinity and high thermoelectric power factor. The Seebeck coefficient and electrical conductivity of p-type Sb2Te3 thin film (αp, σp) and ... |
| Databáze: | OpenAIRE |
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