| Autor: |
T. Vermeulen, T. Yao, Dirk Wellekens, A. Lowe, N. Bellafiore, J. Van Houdt |
| Rok vydání: |
2005 |
| Předmět: |
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| Zdroj: |
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.. |
| Popis: |
A negative oxide charge located at the split-point is the main cause of threshold voltage window closure in source side injection flash EEPROM cells under 10/sup 5/ write/erase cycles. We show a slow trapping rate and a temperature dependence of the detrapping rate below 100/spl deg/C. The detrapping rate is not temperature dependent between 100/spl deg/C and 250/spl deg/C. Finally, the split-point charge formation can be significantly reduced by using of a ramped write pulse. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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