Electron probe response function and piezo-spectroscopic behaviour of semiconductor materials in presence of highly graded stress fields
| Autor: | Giuseppe Pezzotti, and Andrea Leto, Alessandro Alan Porporati, Atsuo Matsutani, Wenliang Zhu |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Acoustics and Ultrasonics Scanning electron microscope business.industry Cathodoluminescence Fracture mechanics Electron Condensed Matter Physics Molecular physics Displacement (vector) Surfaces Coatings and Films Electronic Optical and Magnetic Materials Stress (mechanics) Optics Residual stress business Stress intensity factor |
| Zdroj: | Journal of Physics D: Applied Physics. 39:4975-4986 |
| ISSN: | 1361-6463 0022-3727 |
| DOI: | 10.1088/0022-3727/39/23/012 |
| Popis: | The response function of the electron probe and the stress dependence of cathodoluminescence spectra emitted by selected semiconductor materials have been evaluated by scanning across sharp bi-material interfaces and along highly graded residual stress fields generated at the tip of an equilibrium crack, respectively. These microscopic procedures can be made fully quantitative provided that the crack opening displacement of the investigated crack is preliminarily measured in a scanning electron microscope for an in situ estimate of the crack-tip stress intensity factor. Taking advantage of the high scanning flexibility of the electron probe, capable of nanometric lateral displacements, spectral shifts typical of the K-dominated zone along the axis of crack propagation were recorded as a function of distance from the crack-tip. A plot of equi-biaxial stress versus spectral band shift was then obtained whose slope represents the piezo-spectroscopic coefficient of the selected material band. A theoretical analysis was attempted to analyse the in-plane interaction between sample and electron probe and to put forward suitable conditions for a reliable assessment of highly graded stress fields. Conditions were worked out into generalized plots as a function of spectroscopic and mechanical parameters for GaN, 3C–SiC and GaAs, as paradigm semiconductor materials. |
| Databáze: | OpenAIRE |
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