Super-low-k SiOCH film (k = 1.9) with extremely high water resistance and thermal stability formed by neutral-beam-enhanced CVD
| Autor: | Shingo Kadomura, Hisashi Yano, Shigeo Yasuhara, Noriaki Matsunaga, Masaki Yoshimaru, Tsutomu Shimayama, Toru Sasaki, Seiji Samukawa, Kunitoshi Tajima |
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| Rok vydání: | 2010 |
| Předmět: |
Permittivity
Acoustics and Ultrasonics Chemistry Analytical chemistry Low-k dielectric Young's modulus Dielectric Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Surface coating symbols.namesake Plasma-enhanced chemical vapor deposition symbols Thermal stability |
| Zdroj: | Journal of Physics D: Applied Physics. 43:065203 |
| ISSN: | 1361-6463 0022-3727 |
| Popis: | We developed a neutral-beam-enhanced method of chemical vapour deposition (NBECVD) to obtain a lower dielectric constant for the SiOCH interlayer dielectric film while maintaining a reasonable modulus. We achieved a higher deposition rate than that with the precursor of dimethyl-dimethoxy-silane (DMDMOS) we previously reported on by using Ar NBECVD with a precursor of dimethoxy-tetramethyl-disiloxine (DMOTMDS). This is because of the high absorption coefficient of DMOTMDS. Ar NBECVD with DMOTMDS also achieved a much lower dielectric constant than the conventional PECVD film, because this method avoids the precursor dissociation that causes low dielectric film with many linear Si–O structures. We obtained a k value of 1.9 for the super-low-k SiOCH film with an extremely water resistant, and very thermally stable and integration-possible modulus (>4 GPa) by controlling the bias power. |
| Databáze: | OpenAIRE |
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