High performance pMOS circuits with silicon-on-glass TFTs
| Autor: | Jeffrey Scott Cites, Jae Ik Kim, Chuan Che Wang, Jackson Lai, Won Jae Choi, Jae Won Choi, Mallory Mativenga, Timothy J. Tredwell, Carlo Kosik Williams, Eric J. Mozdy, Jin Jang |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Electrical engineering Ring oscillator Integrated circuit Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention PMOS logic Threshold voltage law Thin-film transistor Materials Chemistry Optoelectronics Electrical and Electronic Engineering Resistor business Voltage Electronic circuit |
| Zdroj: | Solid-State Electronics. 54:299-302 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/j.sse.2009.10.001 |
| Popis: | We have studied the fabrication of ring oscillator and shift resistor using p-type metal–oxide–semiconductor (pMOS) TFTs based on silicon-on-glass (SiOG). The TFT exhibited field-effect mobility of 183 cm2/V s, threshold voltage of −0.30 V and gate voltage swing of 0.14 V/dec. The 23-stage ring oscillator made of pMOS TFTs exhibited a propagation delay time of 2.61 ns at the supply voltage of 10 V. On the other hand, the rise and fall times of the shift resistor were found to be 2.8 μs and 1.4 μs, respectively. Therefore, high performance integrated circuits can be possible on SiOG using pMOS technologies. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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