Water and oxygen permeation of silicon nitride films prepared by plasma-enhanced chemical vapor deposition
| Autor: | C. C. Chiang, L.-S. Chang, Y. J. Gao, C. L. Huang, Heng-I Lin, W. C. Lo, Ray-Hua Horng, Dong-Sing Wuu |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Analytical chemistry Surfaces and Interfaces General Chemistry Chemical vapor deposition Nitride Condensed Matter Physics Surfaces Coatings and Films Chamber pressure Oxygen transmission rate chemistry.chemical_compound Silicon nitride chemistry Plasma-enhanced chemical vapor deposition Materials Chemistry Transmittance Organic chemistry Water vapor |
| Zdroj: | Surface and Coatings Technology. 198:114-117 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2004.10.034 |
| Popis: | Silicon nitride (SiN x ) films deposited on flexible polyethersulfone (PES) substrates by plasma-enhanced chemical vapor deposition (PECVD) have been investigated for water vapor transmission rate (WVTR) and oxygen transmission rate (OTR) barrier applications. Details of the NH 3 /SiH 4 flow ratio and chamber pressure effects on the SiN x /PES properties in terms of chemical bonding, transmittance, refractive index, deposition rate, adhesion, roughness, OTR and WVTR were investigated. When the NH 3 /SiH 4 flow ratio increased from 1.43 to 10, evident variations in refractive index and transmittance of the SiN x /PES samples were observed. Moreover, as the chamber pressure increases from 26.7 to 133.4 Pa, the deposition rate, adhesion and roughness increase while no evident variations in WVTR and OTR were observed. Under optimum conditions, the WVTR and OTR of 100-nm-thick SiN x barrier coating on PES at 150 °C decreased to a value of near 0.01 g/m 2 /day and 0.01 cm 3 /m 2 /day, respectively. This indicates that the SiN x barrier on PES has high potential for flexible display applications. |
| Databáze: | OpenAIRE |
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