Chemical-Mechanical Planarization Compatible for Both Copper/Low k Level in a 90 nm Technology and Thick Copper Level in an RF Technology

Autor:	Cedric Perrot, Yannick Loquet, Blaise Iteprat, Pierre Bouillon
Rok vydání:	2007
Předmět:	Materials science Consumables business.industry chemistry.chemical_element Nanotechnology Inductor Copper chemistry Chemical-mechanical planarization Slurry Optoelectronics Radio frequency business Sheet resistance Electronic circuit
Zdroj:	ECS Transactions. 3:1-8
ISSN:	1938-6737 1938-5862
Popis:	The emergence of wireless communication technologies has increased the need for high performance radio frequency (RF) circuits as transceivers or filters (1). These functions imply high quality factor (Q) inductors. One way to reach such high Q value is to increase the ultimate copper thickness (above 3µm). Whereas Cu CMP has been widely reported as one of the leading techniques to integrate copper interconnects, many issues are still encountered for thick copper applications, where uniformity, topology and process time are major concerns. In this study, we develop a copper bulk CMP process compatible for both thick copper/low k interconnects and RF application. Starting from conventional sub-0.18µm slurry, an additive solution is added to enhance its removal rate. Results obtained on a 4 µm thick level are presented. It is shown that electrical performances are preserved, notably sheet resistance uniformity. Other usual CMP parameters, like planarization and consumables aging are also presented. The approach reported here, which emphasizes chemical contribution, is expected to make compatible slurries dedicated to sub-0.18µm copper/low k technologies with thick copper applications, while not inducing significant additional cost of ownership.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::58d72d9707f3d8dc8f561c4a41294465 https://doi.org/10.1149/1.2819476 Zobrazit plný text záznamu