Enhancement of the Schottky Effect in a Si(100)—Water System Using Porous Polymeric Track-Etched Membranes
| Autor: | E. P. Goryunova, Sergey P. Timoshenkov, S. N. Novikov, Natalia E. Korobova |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Silicon Schottky effect Kinetics chemistry.chemical_element Sorption 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences 0104 chemical sciences Dipole Membrane chemistry Chemical engineering Work function Physical and Theoretical Chemistry 0210 nano-technology Porosity |
| Zdroj: | Russian Journal of Physical Chemistry A. 90:856-860 |
| ISSN: | 1531-863X 0036-0244 |
| Popis: | The kinetics of variation in the electronic work function (EWF) of single-crystal silicon Si(100) exposed to liquid water is studied. It is shown that immersing porous film track-etched membranes (TEMs) with pore sizes of 3.0–0.1 μm in water containing Si(100) considerably reduces the EWF of single-crystal silicon. It is found that a similar effect is observed when TEMs in the form of caps are held over the surface of water containing Si(100) at a distances of around 1.5–2.0 cm. It is speculated that the occurrence of a developed surface of TEMs in an open system changes the supramolecular structure of the water and leads to the formation of associates (H2O) n with increased dipole moments (compared to molecular moments), enhancing the Schottky effect during sorption on Si(100) surfaces. |
| Databáze: | OpenAIRE |
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