Simple and Cost-Effective Reduction of Light Induced Degradation in B-Doped Cz-Si Solar Cells By Silexium PECVD SiCN Antireflective Passivation Coatings
| Autor: | Hong, J., Kang, M.H., Ebong, A., Rounsaville, B., Davies, M., Okoniewska, G., Yang, X., Navala, S., Rohatgi, A. |
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| Jazyk: | angličtina |
| Rok vydání: | 2010 |
| Předmět: | |
| DOI: | 10.4229/25theupvsec2010-2bo.1.4 |
| Popis: | 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6-10 September 2010, Valencia, Spain; 1200-1204 Boron doped p-type Czochralski (Cz) silicon solar cells undergo efficiency degradation under illumination. The light induced degradation (LID) is related to the formation of Bs-O2i complexes in the bulk of Si which act as strong recombination centers. In this paper, Sixtron Advanced Materials Inc. introduces its patentpending Silexium technology using SiH4-free solid or liquid source, a PECVD SiCN antireflective passivation coating which can reduce LID significantly in Cz-Si solar cells. This LID reduction may be related to carbon atoms which diffuse into the Si bulk from the SiCN film. Namely, the in-situ grown carbon in the SiCN film provides a source of additional carbon which gets incorporated into the bulk silicon during the cell processing. This carbon competes with boron to form a carbon-oxygen related complex and reduces the Bs-O2i concentration and the associated LID compared to conventional SiN coated solar cells. The SiCN coated solar cells studied here showed 1 to 2% relative efficiency reduction after several hours of illumination compared with 1 to 6 % relative efficiency drop for SiNx coated counterparts on a variety of boron doped Cz-Si materials with varying oxygen content. |
| Databáze: | OpenAIRE |
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