Integrated Ge-Sb-S Chalcogenide Raman Laser

Autor:	Pingyang Zeng, Zelin Yang, Bin Zhang, Jiaxin Zhao, Di Xia, Yufei Huang, Zhaohui Li
Rok vydání:	2021
Předmět:	Materials science business.industry Chalcogenide Physics::Optics Nonlinear optics Laser law.invention symbols.namesake chemistry.chemical_compound Raman laser chemistry law Q factor symbols Optoelectronics Physics::Atomic Physics Raman spectroscopy business Lasing threshold Raman scattering
Zdroj:	Conference on Lasers and Electro-Optics.
Popis:	We demonstrate an integrated Raman laser based on Ge-Sb-S high-Q microresonators. Both single-mode and multimode operation are shown with a low lasing threshold of ~9 mW. Besides, cascaded Raman lasing is demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::58bc0e4aa4eb825adb33a4ad9d6b94bc https://doi.org/10.1364/cleo_at.2021.jw1a.101 Zobrazit plný text záznamu