Impact of substrate on performance of band gap engineered graphene field effect transistor
| Autor: | K. Sivasankaran, Durgesh Laxman Tiwari |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Silicon Band gap chemistry.chemical_element Nanotechnology 02 engineering and technology 01 natural sciences law.invention law Electric field 0103 physical sciences General Materials Science Electrical and Electronic Engineering Saturation (magnetic) 010302 applied physics Computer simulation Graphene business.industry Conductance 021001 nanoscience & nanotechnology Condensed Matter Physics chemistry Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | Superlattices and Microstructures. 113:244-254 |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2017.11.004 |
| Popis: | In this paper, we investigate the graphene field effect transistor (G-FET) to enhance the drain current saturation and to minimize the drain conductance (gd) using numerical simulation. This work focus on suppressing the drain conductance using silicon substrate. We studied the impact of different substrate on the performance of band gap engineered G-FET device. We used a non-equilibrium green function with mode space (NEGF_MS) to model the transport behavior of carriers for 10 nm channel length G-FET device. We compared the drain current saturation of G-FET at higher drain voltage regime on silicon, SiC, and the SiO2 substrate. This paper clearly demonstrates the effect of substrate on an electric field near drain region of G-FET device. It is shown that the substrate of G-FET is not only creating a band gap in graphene, which is important for current saturation and gd minimization, but also selection of suitable substrate can suppress generation of carrier concentration near drain region is also important. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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