Diffusion barriers between gold and semiconductors

Autor:	Ronald S. Nowicki
Rok vydání:	1982
Předmět:	Inorganic Chemistry Materials science Semiconductor business.industry Metallic materials General Materials Science Nanotechnology Semiconductor device Diffusion (business) business Electrical conductor
Zdroj:	Gold Bulletin. 15:21-24
ISSN:	2190-7579 0017-1557
DOI:	10.1007/bf03216567
Popis:	The effectiveness of a number of semiconductor devices depends on the efficiency with which interdiffusion between the semiconductor and metals, which must be applied to it either as contacts or conductive metallizations, can be blocked. Comparisons of the characteristics of the diffusion barriers which can be used between gold and semiconductors — such as those which are made here — therefore have considerable significance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::58aa2a7bb5ce3b30d98e4d4ba066f977 https://doi.org/10.1007/bf03216567 Zobrazit plný text záznamu Full text from SpringerLink