High-pressure studies of GaAs-AlxGa1−xAs quantum wells at 300 and 80 K using photoreflectance spectroscopy

Autor:	B.A. Vojak, H. R. Chandrasekhar, A. Kangarlu, F. A. Chambers, Meera Chandrasekhar, J. M. Meese, Yogendra Mohan Kapoor
Rok vydání:	1988
Předmět:	X-ray absorption spectroscopy Materials science Effective mass (solid-state physics) Condensed matter physics Superlattice Electron Atomic physics Quantum number Spectroscopy Quantum well Molecular beam epitaxy
Zdroj:	Physical Review B. 38:9790-9796
ISSN:	0163-1829
DOI:	10.1103/physrevb.38.9790
Popis:	A detailed photoreflectance study of a GaAs-Al/sub 0.3/Ga/sub 0.7/As multiple quantum well of well width 260 A is carried out at 300 and 80 K. The pressure dependence of a large number of quantized states is observed. The sublinearity of pressure dependence increases with increasing quantum number. A model calculation that includes the pressure dependence of electron effective mass accurately describes the data. Transitions associated with L and X band extrema are observed and their pressure coefficients deduced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5892d556f001f1f8e7cd022bc8a274e3 https://doi.org/10.1103/physrevb.38.9790 Zobrazit plný text záznamu