Effect of hydrogen sulfide on photoelectric characteristics of Al-n-Si-SnO2:Cu-Ag isotype heterostructures
| Autor: | Yu. G. Malinin, E. V. Russu, Evgenii Ivanov, S. V. Slobodchikov, Kh. M. Salikhov |
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| Rok vydání: | 2004 |
| Předmět: |
Photocurrent
Chemistry Hydrogen sulfide Analytical chemistry Double injection Heterojunction Photoelectric effect Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Isotype Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science chemistry.chemical_compound Charge carrier |
| Zdroj: | Semiconductors. 38:1381-1383 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1836056 |
| Popis: | Electrical and photoelectric properties of Al-n-Si-SnO2:Cu-Ag heterostructures are studied. It is established that the charge transport in this structure is caused by double injection of charge carriers in the diffusion approximation. A 35% increase in the photocurrent is observed after exposing the heterostructure to a mixture of 1% of H2S with N2. The initial values of the photocurrent are recovered if the heterostructure is subsequently exposed to air. The rise and decay times of the photosignal are relatively short: 1 and 3 min, respectively. |
| Databáze: | OpenAIRE |
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