Islands as catalyst for film relaxation in Bi-mediated Ge epitaxy on Si(111)
| Autor: | Jens Falta, Gerald Falkenberg, Thomas J. Schmidt, Gerhard Materlik, J. H. Zeysing, Robert L. Johnson |
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| Rok vydání: | 2000 |
| Předmět: |
Chemistry
Relaxation (NMR) X-ray standing waves Nucleation General Physics and Astronomy chemistry.chemical_element Germanium Surfaces and Interfaces General Chemistry Condensed Matter Physics Epitaxy Surfaces Coatings and Films law.invention Crystallography law Dislocation Scanning tunneling microscope Deposition (law) |
| Zdroj: | Applied Surface Science. :256-262 |
| ISSN: | 0169-4332 |
| Popis: | The growth of Ge on Bi-terminated Si(111) √3×√3 has been investigated by scanning tunneling microscopy (STM) and X-ray standing waves (XSW). In the Ge thickness range from 1 to 15 bilayers (BL), the morphology of the Ge film surface undergoes drastic changes. At low coverages, a smooth layer-by-layer growth mode of pseudomorphically strained Ge is found. Further Ge deposition leads to the formation of clusters of triangular partially relaxed Ge islands with a side length of approximately 200 A and an average island height of approximately 20 A. The islands act as catalyst for further island formation and for the relaxation of the complete Ge film by dislocation formation. Finally with increasing Ge film thickness, the surface morphology changes again. Ge films exceeding a thickness of ∼8 BL are almost completely relaxed and smooth. Hence, Bi can be concluded to successfully act as a surfactant for Ge epitaxy on Si(111). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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