Spin-injection in semiconductors: materials challenges and device aspects
| Autor: | Willem Van Roy, Pol Van Dorpe, Gustaaf Borghs, Vasyl Motsnyi, Jo De Boeck, Zhiyu Liu |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
Spin polarization Spintronics business.industry Schottky diode Heterojunction Magnetic semiconductor Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor Optoelectronics Condensed Matter::Strongly Correlated Electrons Zener diode business Quantum tunnelling |
| Zdroj: | physica status solidi (b). 241:1470-1476 |
| ISSN: | 1521-3951 0370-1972 |
| Popis: | Successful spin-injection from magnetic contacts into a semiconductor heterostructure (up to room temperature) is seen as one of the key features to realise spintronic applications. In this paper we describe our effort in establishing spin-injection in the tunneling regime from various different ferromagnetic contacts. The device structure that is used to test the spin-injection is a III–V light emitting device. This device has good characteristics as a detector of the injected electron spin-polarisation. We summarise the results on spin-injection obtained from different magnetic contact strategies: ferromagnetic metal/AlOx, ferromagnetic metal/Schottky tunnel barrier and ferromagnetic semiconductor/Zener diode combination. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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