Structural Characterization of RF‐Sputtered a‐C:N Thin Films by Raman, IR, and X‐ray Reflectometry Spectroscopies

Autor:	Mustapha Azizan, A. Essafti, El Maati Ech-Chamikh, Y. Ijdiyaou
Rok vydání:	2008
Předmět:	Argon Silicon Analytical chemistry chemistry.chemical_element Infrared spectroscopy Nitride Atomic and Molecular Physics and Optics Analytical Chemistry symbols.namesake chemistry Amorphous carbon Sputtering symbols Thin film Raman spectroscopy Spectroscopy
Zdroj:	Spectroscopy Letters. 41:136-143
ISSN:	1532-2289 0038-7010
DOI:	10.1080/00387010802007999
Popis:	Amorphous carbon nitride thin films (a‐C:N) were deposited from a carbon target, at room temperature onto silicon substrates, by reactive RF sputtering in a gas mixture of argon and nitrogen. The structural properties of these films have been studied by Raman, infrared (IR), and X‐ray reflectometry spectroscopies. Both the IR and Raman spectra of the a‐C:N films reveal the presence of C–C, C˭C, C˭N, and C≡N bonding types. The Raman spectra analysis shows, an increase of the C≡N triple bonds content when the concentration of nitrogen C(N2) in the gas mixture is increased. The Raman intensities ratio between the disorder (D) and graphitic (G) bands increases with C(N2) suggesting an increased disorder with the incorporation of nitrogen in the carbon matrix. The effect of C(N2) on the density of a‐C:N films was also investigated by X‐ray reflectometry measurement. The increase of the nitrogen concentration C(N2) was found to have a significant effect on the density of the films: as C(N2) increases f...
Databáze:	OpenAIRE
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