Design and Implementation of 1.5 kW Half Bridge Bidirectional DC-DC Converter based on Gallium Nitride devices

Autor:	Shubhangi Gurudiwan, Shamibrota Kishore Roy, Kaushik Basu
Rok vydání:	2019
Předmět:	Materials science business.industry Buck converter Wide-bandgap semiconductor Gallium nitride High-electron-mobility transistor Thermal conduction chemistry.chemical_compound chemistry Half bridge MOSFET Optoelectronics business Dc dc converter
Zdroj:	2019 National Power Electronics Conference (NPEC).
Popis:	Use of wide band gap devices such as SiC MOSFET and GaN HEMT in a converter results in high power density and high efficiency as compared to state of the art Si switches. The objective of this work is to build a 350V DC (input), 1.5kW buck converter with switching frequency 100kHz. Commercially available GaN devices are compared based on performance in terms of package, conduction and switching losses. The module achieves more than 97% efficiency at all values of the current.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::58590c624a0d7863e6276f25727679a2 https://doi.org/10.1109/npec47332.2019.9034802 Zobrazit plný text záznamu