Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization
| Autor: | Campbell Millar, Salvatore Maria Amoroso, Michael Hargrove, Binjie Cheng, Ken Greiner, Asen Asenov, Louis Gerrer, Razaidi Hussin, David M. Fried, Craig Alexander, Dave Reid, Andrew R. Brown |
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| Rok vydání: | 2015 |
| Předmět: |
Model extraction
Engineering business.industry Transistor Process (computing) Semiconductor device modeling Process design Semiconductor process simulation Electronic Optical and Magnetic Materials law.invention law Logic gate Electronic engineering Electrical and Electronic Engineering business Technology CAD Simulation |
| Zdroj: | IEEE Transactions on Electron Devices. 62:1739-1745 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | In this paper we illustrate how the predictive Technology Computer Aided Design (TCAD) process device simulation can be used to evaluate process, statistical, and time-dependent variability at the early stage of the development of new technology. This is critically important for the delivery of accurate early Process Design Kits, including process variability, statistical variability, time-dependent variability (degradation) and their interactions and correlations. This is also critical to the TCAD-based Design-Technology Co-Optimisation (DTCO). To accomplish this task, the fast, large area Coventor virtual fabrication platform SEMulator3D was integrated in the GoldStandradSimulations TCAD-based DTCO tool chain. Published data for Intel 22-nm FinFET technology are used to illustrate and validate the results of the TCAD process and device simulation, the compact model extraction, and the statistical circuit simulation. |
| Databáze: | OpenAIRE |
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