Memristor effect on bundles of vertically aligned carbon nanotubes tested by scanning tunnel microscopy

Autor:	Boris G. Konoplev, Yu. F. Blinov, Oleg A. Ageev, Vladimir A. Smirnov, A. S. Kolomiitsev, O. I. Il’in, A. A. Fedotov, M. V. Rubashkina
Rok vydání:	2013
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Nanotechnology Carbon nanotube Memristor Radius law.invention Nanoelectronics Electrical resistivity and conductivity law Electric field Microelectronics business Voltage
Zdroj:	Technical Physics. 58:1831-1836
ISSN:	1090-6525 1063-7842
Popis:	We report on the results of experimental study of an array of vertically aligned carbon nanotubes (VA CNTs) by scanning tunnel microscopy (STM). It is shown that upon the application of an external electric field to the STM probe/VA CNT system, individual VA CNTs are combined into bundles whose diameter depends on the radius of the tip of the STM probe. The memristor effect in VA CNTs is detected. For the VA CNT array under investigation, the resistivity ratio in the low- and high-resistance states at a voltage of 180 mV is 28. The results can be used in the development of structures and technological processes for designing nanoelectronics devices based on VA CNT arrays, including elements of ultrahigh-access memory cells for vacuum microelectronics devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::585716ec4e043812a37a38ce792ab0f5 https://doi.org/10.1134/s1063784213120025 Zobrazit plný text záznamu Plný text ve formátu PDF