| Autor: |
Yong Lack Choi, Ho Ju Song, Dong-Won Kim, Sung In Hong, Donggun Park, Eun Jung Yun, Na-Young Kim, Hyun Jun Bae, Chang Woo Oh, Sung Hwan Kim |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE International SOI Conference. |
| ISSN: |
1078-621X |
| Popis: |
In this study, we compared sensing margin according to the back gate bias and body doping concentration. We achieved large sensing margin of 62 uA/um at LG = 87 run and demonstrated sensing margin of 45 uA/um with LG = 47 nm that is the smallest device ever reported for the floating body RAM. For the scaling down to the sub 50 nm gate length, we should reduce the body thickness for the SCE with optimum body doping condition . Possibility of scaling down with the capacitor-less RAM is shown to the sub 50 nm from this result. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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