Low-damage NH 3 plasma treatment on SiO 2 tunneling oxide of chemically-synthesized gold nanoparticle nonvolatile memory
| Autor: | Kai-Ping Chang, Li-Chun Chang, Jer-Chyi Wang, Ruey-Dar Chang, Chao-Sung Lai, Chin-Hsiang Liao |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Oxide Analytical chemistry General Physics and Astronomy Nanoparticle Relative permittivity 02 engineering and technology Plasma 021001 nanoscience & nanotechnology 01 natural sciences Non-volatile memory chemistry.chemical_compound chemistry Electron affinity 0103 physical sciences Band diagram General Materials Science 0210 nano-technology Layer (electronics) |
| Zdroj: | Current Applied Physics. 16:605-610 |
| ISSN: | 1567-1739 |
| Popis: | Characteristics of chemically-synthesized (CS) gold nanoparticle (Au-NP) nonvolatile memories (NVMs) with low-damage NH 3 plasma treatment on a tunneling oxide (TO) layer have been investigated. Although the dot density of CS Au-NPs is decreased, the programming efficiency of memories with optimized NH 3 plasma treatment condition is enhanced due to the formation of a trapezoid-like energy band diagram of the TO layer by nitrogen incorporation. With the extraction of relative permittivity and electron affinity of the TO layer, the capacitance-voltage ( C - V ) and programming behaviors of CS Au-NP memories with low-damage NH 3 plasma treatment on the TO layer are well-fitted by the TCAD (Technology Computer-Aided-Design) simulation. Further, the built-in electric field induced by the trapezoid-like energy band diagram of the TO layer can suppress the leakage current of the TO layer, thereby improving the data retention properties. The low-damage NH 3 plasma treatment that results in no plasma damage to the TO layer has been proposed to be the probable candidate for future NVM applications. |
| Databáze: | OpenAIRE |
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