Electron-beam nanolithography and line-edge roughness of acid-breakable resin-based positive resist
| Autor: | Hiroshi Shiraishi, Toshio Sakamizu |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
chemistry.chemical_classification
Materials science Acetal Analytical chemistry Polymer Surface finish Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound Nanolithography chemistry Resist Surface roughness Molar mass distribution Electrical and Electronic Engineering Electron-beam lithography |
| Zdroj: | Microelectronic Engineering. :763-770 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(02)00453-7 |
| Popis: | A positive chemical amplification resist based on acid-catalyzed fragmentation of the acetal groups in the polymer main-chain has been developed for electron-beam (EB) nanolithography. This resist consists of an acid generator, an acid-diffusion controller and an acid-breakable (AB) resin that is synthesized through a co-condensation reaction between polyphenol and aromatic multi-functional vinylether compound. Despite a large difference in the molecular weight distribution of the AB resins, the AB resin-based resists (ABRs) provide high-resolution patterns (60-nm line-and-spaces) with high sensitivity ( 2 at 30 kV). AFM analysis showed the surface roughness for ABR is less than half (RMS: ∼1 nm) compared with that for novolak resin-based resist. By using ABR, the sub-100 nm L/S patterns with line-edge roughness (3 σ ) about 5 nm are obtained. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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