Photorefractive waveguides in He^+ implanted pure and Te-doped Sn_2P_2S_6

Autor:	Alexander A. Grabar, Mojca Jazbinsek, Roger Mosimann, Flurin Juvalta, Peter Günter
Rok vydání:	2009
Předmět:	Materials science business.industry Doping Nonlinear optics Statistical and Nonlinear Physics Photorefractive effect Slow light Ferroelectricity Atomic and Molecular Physics and Optics Wavelength Optics Semiconductor Ion implantation Optoelectronics business
Zdroj:	Journal of the Optical Society of America B. 26:444
ISSN:	1520-8540 0740-3224
DOI:	10.1364/josab.26.000444
Popis:	We have demonstrated for the first time, to the best of our knowledge, photorefractive two-wave mixing in He+ implanted waveguides in one of the most promising materials for infrared photorefractive applications, the ferroelectric semiconductor Sn2P2S6. The high optical nonlinearity is preserved after implantation and at the telecommunication wavelength λ=1.55 μm, a maximal two-wave mixing gain of 2.5 cm−1 has been measured in Te-doped waveguides. In the nominally pure material an increase of the effective number of traps after implantation has been observed, resulting in an increase of the two-beam coupling gain by a factor of almost 2 in the 633-1064 nm spectral range. In 1% Te-doped Sn2P2S6 the effect of ion implantation to the photorefractive response is completely different than in pure materials. While the dominant contribution by holes is not considerably affected, a strong, thermally induced charge compensation is observed in the He+ implanted Te-doped waveguides.
Databáze:	OpenAIRE
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