Electrophysical properties of Al/nanocrystalline CeOx/Si/Al structures

Autor:	L. N. Korolevych, A. V. Borisov, N. V. Maksimchuk
Rok vydání:	2015
Předmět:	Materials science business.industry Analytical chemistry Heterojunction Flash evaporation Nanocrystalline material Heterojunction diode Metal Semiconductor Electrical resistivity and conductivity visual_art visual_art.visual_art_medium Electronic engineering business Layer (electronics)
Zdroj:	2015 IEEE 35th International Conference on Electronics and Nanotechnology (ELNANO).
DOI:	10.1109/elnano.2015.7146857
Popis:	Nanocrystalline CeO x film in the Al/nc-CeO x /Si-Al structures has been obtained using flash evaporation method and method of metallic Ce oxidation. The electrophysical properties of the Al/nc-CeO x /Si/Al structures and the effect of technological factors on these properties have been investigated. It was revealed that the nanocrystalline CeO x layer in the Al/nc-CeO x /Si/Al structures is a semiconductor with an electronic conductivity and volume resistivity is within the range of 0.5–30 MΩ·cm. Based on the synthesized Al/nc-CeO x /Si/Al structures the new types of heterojunction diodes with high interface quality have been developed. Interface state density of obtained structures is of about 7·1010 cm−2·eV−1.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::58273b3f47229248681d06776d43f27b https://doi.org/10.1109/elnano.2015.7146857 Zobrazit plný text záznamu