Laser‐driven boron diffusion into a Si epitaxial layer from a p+ boron‐doped Si substrate

Autor:	Kyong-Min Kim, R. J. von Gutfeld, S. N. Mei, S. F. Chu, M.J. Saccamango, D. R. Vigliotti
Rok vydání:	1992
Předmět:	Fusion Materials science Argon Physics and Astronomy (miscellaneous) Dopant Silicon Analytical chemistry chemistry.chemical_element Recrystallization (metallurgy) Mineralogy Laser Epitaxy law.invention chemistry law Irradiation
Zdroj:	Applied Physics Letters. 61:1066-1068
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.107718
Popis:	Experiments are described in which ∼0.2‐s‐wide argon laser pulses are incident on a 6‐μm‐thick n− Si epitaxial layer. Local melting and refreezing of both the layer and a small volume of the underlying p+ boron‐doped Si substrate occur. In the molten phase, boron diffusion from the substrate is sufficient to make a low resistance path between the front surface and the substrate, with a nearly uniform dopant concentration of 5×1018/cm3. The melted/recrystallized front surface diameter is ∼50 μm. Unique features and applications of this type of substrate contacting are discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::582701c1d78ad30fe2f2ed66ea5208f5 https://doi.org/10.1063/1.107718 Zobrazit plný text záznamu