Atomic Layer Deposition of Rare-earth Oxide Thin Films for High-k Dielectric Applications

Autor:	Nathan Stafford, Ben Feist, Christian Dussarrat, Robert L. Opila, Conan Weiland, Rajesh Katamreddy, Laurie Guerin, Venkateswara R. Pallem
Rok vydání:	2009
Předmět:	Materials science business.industry Layer by layer Oxide Nanotechnology Atomic layer deposition chemistry.chemical_compound Carbon film Semiconductor chemistry Atomic layer epitaxy Thin film business High-κ dielectric
Zdroj:	ECS Transactions. 19:525-536
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3122114
Popis:	Many different organolanthanide molecules are being proposed as metal sources for depositing metal and metal oxide layers for semiconductors by atomic layer deposition (ALD). These precursors need particular physical and thermal properties to be used in the semiconductor manufacturing process. ALD deposition methods are very promising; however, new high-κ metal oxide films will require new precursors to meet the very stringent requirements of the semiconductor process. Tris(cyclopentadienyl) rare earth compounds are interesting for use as precursors because of their high vapor pressures, often low melting points and availability in the liquid state, high reactivity towards water, and high growth rates for deposition. In this study, we examine the various important thermal properties of Cp-based lanthanide precursors along with their ALD properties for metal oxide deposition.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5824e874431a807790032284dbc12b06 https://doi.org/10.1149/1.3122114 Zobrazit plný text záznamu