| Autor: |
Shunsaku Muraoka, Yukio Hayakawa, Ryotaro Yasuhara, Kawai Ken, Koji Katayama, Koji Eriguchi, Yoneda Shinichi, Zhiqiang Wei, Kazuhiko Shimakawa, Takumi Mikawa |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT). |
| DOI: |
10.1109/icsict.2016.7998872 |
| Popis: |
An analytic formula based on stochastic differential equation is successfully developed to describe intrinsic ReRAM variation. The formula is useful to predict scaled ReRAM memory window after retention, verified by testing 40 nm 2Mb memory array. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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