Analysis of tin and tin oxide by x-ray photoelectron spectroscopy

Autor:	Anil R. Chourasia, Allen E. Hillegas
Rok vydání:	2021
Předmět:	Materials science Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Condensed Matter Physics Tin oxide Evaporation (deposition) Surfaces Coatings and Films Auger chemistry X-ray photoelectron spectroscopy Thin film Tin
Zdroj:	Surface Science Spectra. 28:014003
ISSN:	1520-8575 1055-5269
DOI:	10.1116/6.0000528
Popis:	Thin film of tin (about 15 nm) was deposited on a silicon ⟨100⟩ substrate by the e-beam evaporation technique. The sample was oxidized in an oxygen atmosphere. Both the elemental tin and the oxidized sample were characterized in situ by the technique of x-ray photoelectron spectroscopy. Magnesium Kα radiation (energy = 1253.6 eV) was used as the source of x-ray excitation. The data in the tin 3d, 3p, 4p, 4d, Auger MNN regions, and the oxygen 1s region were recorded with a pass energy of 35.75 eV. The oxidized tin was found to form the SnO2 phase. The data will serve as a comparison for the study in this field.
Databáze:	OpenAIRE
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