Doping of crystalline silicon solar cell by making use of atmospheric and sub-atmospheric plasma jet
| Autor: | Han-Lim Kang, Junggil Kim, Je Huan Koo, Buil Jeon, Gi-Chung Kwon, Jung-Hyun Kim, Myoung-Soo Yun, Guangsup Cho |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Silicon Dopant business.industry Doping chemistry.chemical_element law.invention Monocrystalline silicon Condensed Matter::Materials Science chemistry law Impurity Condensed Matter::Superconductivity Solar cell Optoelectronics Condensed Matter::Strongly Correlated Electrons Wafer Crystalline silicon business |
| Zdroj: | 2012 Abstracts IEEE International Conference on Plasma Science. |
| DOI: | 10.1109/plasma.2012.6384087 |
| Popis: | Summary form only given. The doping process in the manufacturing of solar cell is to form a p-n junction by the injection of impurity materials into a silicon wafer. The elements of III or V group are used in the doping process during which the dopant materials are diffused thermally into the doping layer. In the conventional process of doping, the furnace or the laser is used with the control of temperature in the doping equipment. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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