The effect of electrical stress on the leakage current of polycrystalline Si thin-film transistors fabricated by metal-induced lateral crystallization
| Autor: | Byung Il Lee, Tae-Kyung Kim, Seung-Ki Joo, Yeo-Geon Yoon, Gi-Bum Kim |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Transistor Metals and Alloys Surfaces and Interfaces Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Metal Stress (mechanics) Thin-film transistor law visual_art Materials Chemistry visual_art.visual_art_medium Optoelectronics Crystallite Crystallization business Deposition (law) |
| Zdroj: | Thin Solid Films. 466:303-306 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2004.02.037 |
| Popis: | The effects of electrical stress on the leakage current of polycrystalline Si (poly-Si) thin-film transistors (TFTs) fabricated by metal-induced lateral crystallization (MILC) were investigated. It was found that the leakage current of MILC TFTs could be reduced by electrical stress ( V G V D >0) and this effect was saturated in about 1000 s. In addition, asymmetric Ni-offset deposition is proposed. By this method, the boundary where the two MILC regions meet can be moved out of the channel region, consequently, resulting in a great reduction in leakage current and in an insensibility to electrical stress. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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