Autor: |
Jianchi Zhang, Douglas C. Hall, Patrick Fay, T. Kosel |
Rok vydání: |
2007 |
Předmět: |
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Zdroj: |
2007 65th Annual Device Research Conference. |
ISSN: |
1548-3770 |
Popis: |
GaAs based MOSFETs have attracted significant interest as a potential technology for both digital and RF applications. Among many candidate gate insulating materials, the native oxide of InAlP offers a low leakage current and modest interface state density while at the same time being simple to fabricate and offering a path to low-cost devices. Both enhancement-mode and depletion-mode MOSFETs with gate lengths > 1 mum have been demonstrated with InAlP native oxide gate dielectrics. We present here the first sub-micron gate length InAlP native oxide GaAs-channel devices, with record microwave performance. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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