Performance of Sub-micron Gate Length InAlP Native Oxide GaAs-channel MOSFETs

Autor:	Jianchi Zhang, Douglas C. Hall, Patrick Fay, T. Kosel
Rok vydání:	2007
Předmět:	Materials science business.industry Transconductance Oxide Electrical engineering Time-dependent gate oxide breakdown Gallium arsenide chemistry.chemical_compound chemistry Gate oxide MOSFET Optoelectronics business Lithography Microwave
Zdroj:	2007 65th Annual Device Research Conference.
ISSN:	1548-3770
Popis:	GaAs based MOSFETs have attracted significant interest as a potential technology for both digital and RF applications. Among many candidate gate insulating materials, the native oxide of InAlP offers a low leakage current and modest interface state density while at the same time being simple to fabricate and offering a path to low-cost devices. Both enhancement-mode and depletion-mode MOSFETs with gate lengths > 1 mum have been demonstrated with InAlP native oxide gate dielectrics. We present here the first sub-micron gate length InAlP native oxide GaAs-channel devices, with record microwave performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::581df53638fbceb6800ff018e7552c94 https://doi.org/10.1109/drc.2007.4373722 Zobrazit plný text záznamu