| Autor: |
B.D. Shafer, C.L. Axness, H.T. Weaver, A.E. Giddings |
| Rok vydání: |
1987 |
| Předmět: |
|
| Zdroj: |
[1987] NASECODE V: Proceedings of the Fifth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits. |
| DOI: |
10.1109/nascod.1987.721132 |
| Popis: |
Single event upset (SEU) susceptibility due to high-energy ion hits on static RAM (SRAM) cells and various latch designs is evaluated using the two-dimensional circuit/transport SIFCOD code. Typical simulations involve as many as seven transistors, simultaneously solved using finite difference techniques on a high speed computer. Areas of SEU-susceptibility are identified on both the SRAM and latch designs. Experimental agreement for SRAM is achieved only with a parameter adjustment due to a 2D-3D effect. This parameter does not scale with device size as expected from physical models. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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