Numerical Study on Schottky-Barrier Double-Gate MOS Transistor with Recessed Channel and Asymmetric Contact

Autor:	Zhengjuan Zhang, Ling Sun, Qiang Wang, Hailang Liang, Jin He, Yun Ye, Min Shi, Guoan Zhang, Wei Zhang, Hongyu He
Rok vydání:	2013
Předmět:	Materials science business.industry Schottky barrier Transistor General Chemistry Condensed Matter Physics law.invention Computational Mathematics law Optoelectronics General Materials Science Double gate Electrical and Electronic Engineering business Communication channel
Zdroj:	Journal of Computational and Theoretical Nanoscience. 10:1147-1149
ISSN:	1546-1963 1546-1955
DOI:	10.1166/jctn.2013.2820
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::581717ef2caa3f1c691198f0ffb036ed https://doi.org/10.1166/jctn.2013.2820 Zobrazit plný text záznamu