A study of the effect of electron and proton irradiation on 4H-SiC device structures
| Autor: | A. N. Yakimenko, A. A. Lebedev, Anatoly M. Strel'chuk, K. S. Davydovskaya, V. V. Kozlovskii |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Silicon Proton business.industry chemistry.chemical_element Schottky diode 02 engineering and technology Electron 021001 nanoscience & nanotechnology 01 natural sciences chemistry 0103 physical sciences Electrode Electron beam processing Optoelectronics Irradiation 0210 nano-technology business Diode |
| Zdroj: | Technical Physics Letters. 43:1027-1029 |
| ISSN: | 1090-6533 1063-7850 |
| Popis: | The changes of the current–voltage characteristics and the uncompensated donor-impurity concentration (N d –N a ) in the base electrode of Schottky diodes and JBS diodes based on 4H-SiC have been studied upon their irradiation with 0.9-MeV electrons and 15-MeV protons. The carrier-removal rate was 0.07–0.15 cm–1 under electron irradiation and 50–70 cm–1 under proton irradiation. It was shown that the current–voltage characteristics of the devices under study remain rectifying at electron irradiation doses of up to ~1017 cm–2. It was demonstrated that the radiation hardness of the SiC-based devices under study substantially exceeds that of silicon p–i–n diodes with similar breakdown voltages. |
| Databáze: | OpenAIRE |
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