On the charge-transport mechanisms in Cr-n-InP and Mo-n-InP diode structures

Autor:	S. V. Slobodchikov, B. E. Samorukov, Kh. M. Salikhov
Rok vydání:	2003
Předmět:	business.industry Chemistry Thermionic emission Double injection Charge (physics) Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Magnet Optoelectronics Charge carrier business Diode
Zdroj:	Semiconductors. 37:936-939
ISSN:	1090-6479 1063-7826
Popis:	Electrical characteristics of Cr-n-InP and Mo-n-InP diode structures were investigated, and the charge-transport mechanism was estimated. It was established that this is either a thermionic or generation-recombination current that dominates in the Cr-n-InP structures, depending on temperature. In Mo-n-InP structures, the double injection of charge carriers dominates in the drift transport.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::580e957b70af03eab8de50977645d715 https://doi.org/10.1134/1.1601662 Zobrazit plný text záznamu Plný text ve formátu PDF