Dynamics of exciton transfer between the bound and the continuum states in GaAs-AlxGa1−xAs multiple quantum wells
| Autor: | E. X. Ping, Hongxing Jiang, P. Zhou, Jingyu Lin |
|---|---|
| Rok vydání: | 1990 |
| Předmět: |
Condensed Matter::Quantum Gases
chemistry.chemical_classification Physics X-ray absorption spectroscopy Photoluminescence Condensed matter physics Condensed Matter::Other Exciton Binding energy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Molecular physics Condensed Matter::Materials Science chemistry Bound state Continuum (set theory) Inorganic compound Quantum well |
| Zdroj: | Physical Review B. 41:12949-12952 |
| ISSN: | 1095-3795 0163-1829 |
| Popis: | Experimentally observed two-exponential decay of excitonic transitions in GaAs-${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells has been successfully interpreted in terms of the exciton transfer between the continuum (free carriers) and the bound states. The calculation results obtained from this exciton-transfer model are in excellent agreement with experimental observations. The rates of the exciton transfer and the free-carrier recombination have been obtained. We have demonstrated that the emission-energy dependence of the decay time constant of the slower decay component is caused by the variation in exciton binding energy induced by interface roughness in the quantum wells. |
| Databáze: | OpenAIRE |
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