Thermomechanical properties of 1C molding compounds

Autor:	D. L. Crouthamel, J. T. Ryan, H. E. Bair, C. R. Taylor, D. J. Boyle, S. C. Tighe
Rok vydání:	1990
Předmět:	Materials science Polymers and Plastics Silicon Transfer molding chemistry.chemical_element Modulus General Chemistry Temperature cycling Epoxy Paint adhesion testing Thermal expansion chemistry visual_art Dynamic modulus Materials Chemistry visual_art.visual_art_medium Composite material
Zdroj:	Polymer Engineering and Science. 30:609-617
ISSN:	1548-2634 0032-3888
Popis:	Eight commercial semiconductor grade epoxy compounds that are used to encapsulate 1C (integrated circuit) devices have been evaluated for their ability to minimize the development of thermal stresses which can cause failure during device temperature cycling. Thermal expansion, dynamic modulus and adhesion studies are used to describe the mechanical interaction between the plastic package and the silicon device it surrounds. A “figure of merit” is defined for the development of stress on the 1C device as it is cooled after the packaging process. The stress is shown to be proportional to the product of three terms: (αp-αs) Ep (Tanch-T) where αp and αs are the expansion coefficients for the plastic and silicon, respectively, Ep is the modulus of the epoxy and Tanch is the temperature at which the epoxy becomes anchored to the silicon device during transfer molding. In addition, the importance of good adhesion between the epoxy encapsulant and the silicon device to prevent package cracking has been demonstrated by finite element analysis and a novel adhesion test.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5804577edeed57d4dd05fb2032d4f73e https://doi.org/10.1002/pen.760301008 Zobrazit plný text záznamu Plný text