Improvement of a bidirectional field effect transistor (FET) switch with less loss
| Autor: | Laurent Ventura, Chawki Benboujema, Ambroise Schellmanns, Thierry Lequeu |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Transistor Electrical engineering High voltage Hardware_PERFORMANCEANDRELIABILITY law.invention Hardware_GENERAL law Logic gate MOSFET Hardware_INTEGRATEDCIRCUITS Optoelectronics Field-effect transistor Power semiconductor device Power MOSFET business Hardware_LOGICDESIGN Diode |
| Zdroj: | 2009 IEEE International Symposium on Industrial Electronics. |
| DOI: | 10.1109/isie.2009.5213761 |
| Popis: | In this paper, we suggest a new behaviour for a MOSFET bidirectional switch for AC mains application. We use two transistors of high voltage Power MOSFETs new technology based on the CoolMOS, one to control the forward current, and the second one to short-circuit the complementary diode, thus, for the first time, significantly decrease its power dissipation. For that, we must improve the power transistor's with the low switching losses (RDS(on)). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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