A 35-Gb/s 0.65-pJ/b Asymmetric Push-Pull Inverter-Based VCSEL Driver With Series Inductive Peaking in 65-nm CMOS
Autor: | Jeongho Hwang, Gyu-Seob Jeong, Gyungock Kim, Deog-Kyoon Jeong, Hong Seok Choi |
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Rok vydání: | 2018 |
Předmět: |
Physics
Extinction ratio business.industry 020208 electrical & electronic engineering Transistor 02 engineering and technology Optical modulation amplitude Vertical-cavity surface-emitting laser law.invention 020210 optoelectronics & photonics CMOS law 0202 electrical engineering electronic engineering information engineering Inverter Optoelectronics Cascode Electrical and Electronic Engineering business Electrical efficiency |
Zdroj: | IEEE Transactions on Circuits and Systems II: Express Briefs. 65:1824-1828 |
ISSN: | 1558-3791 1549-7747 |
Popis: | This brief presents a single-ended asymmetric push-pull inverter for driving a vertical-cavity surface-emitting laser (VCSEL). The proposed driver topology features less power dissipation compared with commonly used differential CML-based drivers. Considering power efficiency and the bandwidth of the VCSEL, the modulation current and the bias of the VCSEL are set to 1.5 and 6.2 mA, respectively. Diode-connected cascode transistors are employed to ensure the adequate voltage level at the output node. Series inductive peaking is utilized to extend the limited bandwidth by splitting the load capacitance and the driver self-capacitance. The proposed VCSEL driver has been fabricated in 65-nm CMOS technology and occupies an active area of 0.009 mm2. The extinction ratio and the optical modulation amplitude of the driver are measured to be 1.8 dB and 0 dBm at 35 Gb/s. The chip consumes 22.6 mW at the data rate of 35 Gb/s, which corresponds to the energy efficiency of 0.65 pJ/b. |
Databáze: | OpenAIRE |
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