In-grown stacking-faults in 4H-SiC epilayers grown on 2° off-cut substrates

Autor:	Jawad ul Hassan, Louise Lilja, J. Peder Bergman, Erik Janzén
Rok vydání:	2015
Předmět:	Crystallography chemistry.chemical_compound Photoluminescence Materials science chemistry Chemical engineering Propane Stacking Chemical vapor deposition Condensed Matter Physics Epitaxy Silane Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (b). 252:1319-1324
ISSN:	0370-1972
DOI:	10.1002/pssb.201451710
Popis:	4H-SiC epilayers were grown on 2 degrees off-cut substrates using standard silane/propane chemistry, with the aim of characterizing in-grown stacking faults. The stacking faults were analyzed with ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::57efdfa6dfe0cb583a007421ea7202ec https://doi.org/10.1002/pssb.201451710 Zobrazit plný text záznamu Plný text