Sub-35 nm SiC Strained nMOSFETs with Super-400 GHz fT for mm-wave CMOS Design

Autor: Jyh-Chyurn Guo, AdhiCahyo Wijaya, Jinq-Min Lin
Rok vydání: 2020
Zdroj: Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.2020.a-3-03
Databáze: OpenAIRE